vishay siliconix SUM110P04-04L document number: 72437 s-61964-rev. c, 09-oct-06 www.vishay.com 1 p-channel 40-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? new package with low thermal resistance product summary v ds (v) r ds(on) ( ) i d (a) d - 40 0.0042 at v gs = - 10 v - 110 0.0062 at v gs = - 4.5 v - 110 to-263 s d g top view ordering information: SUM110P04-04L SUM110P04-04L (lead (pb)-free) s g d p-channel mosfet notes: a. duty cycle 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. limited by package. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) d t c = 25 c i d - 110 a t c = 125 c - 110 pulsed drain current i dm - 240 avalanche current l = 0.1 mh i as - 75 single pulse avalanche energy a e as 281 mj power dissipation t c = 25 c p d 375 c w t a = 25 c b 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 40 c/w junction-to-case r thjc 0.4 available rohs* compliant
www.vishay.com 2 document number: 72437 s-61964-rev. c, 09-oct-06 vishay siliconix SUM110P04-04L notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 250 a - 40 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 125 c - 50 v ds = - 40 v, v gs = 0 v, t j = 175 c - 250 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 120 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 30 a 0.0034 0.0042 v gs = - 10 v, i d = - 30 a, t j = 125 c 0.0063 v gs = - 10 v, i d = - 30 a, t j = 175 c 0.0076 v gs = - 4.5 v, i d = - 20 a 0.005 0.0062 forward transconductance a g fs v ds = - 15 v, i d = - 30 a 20 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 11200 pf output capacitance c oss 1650 reverse transfer capacitance c rss 1200 total gate charge c q g v ds = - 20 v, v gs = - 10 v, i d = - 110 a 235 350 nc gate-source charge c q gs 45 gate-drain charge c q gd 65 gate resistance r g 3 tu r n - o n d e l ay t i m e c t d(on) v dd = - 20 v, r l = 0.18 i d ? - 110 a, v gen = - 10 v, r g = 2.5 25 40 ns rise time c t r 30 45 turn-off delay time c t d(off) 190 300 fall time c t f 110 165 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s - 110 a pulsed current i sm - 240 forward voltage a v sd i f = - 85 a, v gs = 0 v - 1.0 - 1.5 v reverse recovery time t rr i f = - 85 a, di/dt = 100 a/s 65 100 ns peak reverse recovery current i rm(rec) - 3.7 - 5.6 a reverse recovery charge q rr 0.12 0.28 c
document number: 72437 s-61964-rev. c, 09-oct-06 www.vishay.com 3 vishay siliconix SUM110P04-04L typical characteristics 25 c, unless noted output characteristics transconductance capacitance 0 40 80 120 160 200 240 0246810 v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 thru 5 v 3 v 4 v 0 40 80 120 160 200 240 0 153045607590 i d - drain current (a) - transconductance (s) g fs 125 c t c = - 55 c 25 c 0 2000 4000 6000 8000 10000 12000 14000 0 5 10 15 20 25 30 35 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.002 0.004 0.006 0.008 0.010 0 20 40 60 80 100 120 - on-resistance ( ) i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 450 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 20 v i d = 110 a
www.vishay.com 4 document number: 72437 s-61964-rev. c, 09-oct-06 vishay siliconix SUM110P04-04L typical characteristics 25 c, unless noted on-resistance vs. junction temperature avalanche current vs. time 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) v gs = 10 v i d = 30 a r ds(on) - on-resistance (normalized) t in (sec) 1000 10 0.0001 0.01 1 10 100 (a) i dav 0.1 0.001 i av (a) at t a = 25 c i av (a) at t a = 150 c 1 0.1 source-drain diode forward voltage drain source breakdown vs. junction temperature 0.0 0.3 0.6 0.9 1.2 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c 38 40 42 44 46 48 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v (br)dss i d = 250 a
document number: 72437 s-61964-rev. c, 09-oct-06 www.vishay.com 5 vishay siliconix SUM110P04-04L thermal ratings vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?72437. maximum avalanche and drain current vs. case temperature 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d limited by package safe operating area v ds - drain-to-source voltage (v) 1000 1 0.1 1 10 100 limited by r ds(on) 0.1 10 - drain current (a) i d 1 ms 10 s 100 s t c = 25 c single pulse 100 ms dc 10 ms 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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